?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FFH75H60S rev. c1 FFH75H60S 75 a, 600 v, hyperfast diode tm september 2012 FFH75H60S features ? hyperfast recovery t rr = 75 ns (@ i f = 75 a) ? max forward voltage, v f = 1.8 v (@ t c = 25c) ? 600v reverse voltage and high reliability ? avalanche energy rated applications ? general purpose ? switching mode power supply ? power switching circuits 75 a, 600 v, hyperfast diode the FFH75H60S is a hyperfast diode with soft recovery characteristics. it has the half recovery time of ultrafast diodes and is silicon nitride pas s ivated ionimplanted epitaxial planar c ons truction. these devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. their low stored c har ge and hyperfast soft recovery minimize ringing and electrical noise in many power s witc hing circuits reducing power loss in the s witc hing transistors. pin assignments absolute maximum ratings thermal characteristics package marking and ordering 1. cathode 2. anode to-247-2l 1 1. cathode 2. anode 2 symbol parameter rating unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 105 c7 5a i fsm non-repetitive peak surge current 60hz single half-sine wave 750 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter max unit r jc maximum thermal resistance, junction to case 0.4 c/w device marking device package reel size tape width quantity FFH75H60S FFH75H60S to-247-2l - - 30 t c = 25c unless otherwise noted t c = 25c unless otherwise noted information ? rohs compliant
2 www.fairchildsemi.com FFH75H60S 75 a, 600 v, hyperfast diode electrical characteristics t c = 25c unless otherwise noted notes: 1. pulse : te st pulse width = 300 s, duty cycle = 2% test circuit and waveforms parameter conditions min. typ. max unit v f 1 i f = 75 a i f = 75 a t c = 25 c t c = 125 c - - 1.8 1.6 2.2 2.0 v v i r 1 v r = 600 v v r = 600 v t c = 25 c t c = 125 c - - - - 100 1.0 a ma t rr i f = 75 a, di/dt = 200 a/ s, v cc = 390 v t c = 25 c t c = 125 c - - 40 85 75 - ns ns t a t b q rr i f = 75 a, di/dt = 200 a/ s, v cc = 390 v t c = 25 c t c = 25 c t c = 25 c - - - 23 17 80 - - - ns ns nc w avl avalanche energy (l = 40 mh) 20 - - mj ?2012 fairchild semiconductor corporation FFH75H60S rev. c1
3 www.fairchildsemi.com FFH75H60S 75 a, 600 v, hyperfast diode typical performance characteristics figure 1. typical forward voltage drop vs. forward current figure 2. typical reverse current vs. reverse voltage figure 3.typical junction capacitance figure 4. typical reverse recovery time vs. di/dt figure 5. typical reverse recovery current vs. di/dt figure 6. forward current derating curve 150 300 450 600 0.01 0.1 1 10 100 t c = 75 o c t c = 25 o c t c = 125 o c reverse current , i r [ a] reverse voltage, v r [v] 10 0123 1 10 100 t c = 125 o c t c = 75 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 400 0.1 1 10 100 0 200 400 600 800 typical capacitance at 0v = 681 pf capacitances , cj [pf] reverse voltage, v r [v] 100 200 300 400 500 0 30 60 90 120 i f = 75a t c = 75 o c t c = 25 o c t c = 125 o c reverse recovery time, t rr [ns] di/dt [a/ s] 25 50 75 100 125 150 0 25 50 75 100 125 150 175 average forward current, i f(av) [a] case temperature, t c [ o c] 100 200 300 400 500 0 5 10 15 20 i f = 75a t c = 125 o c t c = 25 o c t c = 75 o c reverse recovery current, i rr [a] di/dt [a/ s] ?2012 fairchild semiconductor corporation FFH75H60S rev. c1
4 www.fairchildsemi.com FFH75H60S 75 a, 600 v, hyperfast diode typical performance characteristics (continued) figure 7. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2 ?2012 fairchild semiconductor corporation FFH75H60S rev. c1
5 www.fairchildsemi.com FFH75H60S 75 a, 600 v, hyperfast diode mechanical dimensions dimensions in millimeters to-247-2l ?2012 fairchild semiconductor corporation FFH75H60S rev. c1
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FFH75H60S 75 a, 600 v, hyperfast diode ?2012 fairchild semiconductor corporation FFH75H60S rev. c1
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